2SD1474

Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 100 60 15 12 6 3 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 15V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCE = 12V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.3 1.5 0.6 60 300 2000 0.5 V MHz µs µs µs min typ max 100 100 Unit µA µA V *h FE Rank classification Q P Rank hFE 300 to 1200 800 to 2000 1 Power Transistors PC — Ta 80 6 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SD1474 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=50 Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1) 5 3 Collector current IC (A) IB=10mA 4 9mA 8mA 7mA 6mA 5mA 2 4mA 3mA 2mA 1 1mA 0 1 TC=100˚C 0.3 25˚C –25˚C 0.1 3 0.03 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 10 hFE — IC IC/IB=50 105 VCE=2V 1000 300 100 30 10 3 1 0.3 10 0.01 0.03 0.1 0.01 0.03 fT — IC VCE=12V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 3 104 1 TC=–25˚C 100˚C TC=100˚C 103 25˚C –25˚C 0.3 25˚C 0.1 102 0.03 0.01 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=–IB2) VCC=50V TC=25˚C tstg tf ton Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C ICP IC DC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 10 3 1 0.3 0.1 0.03 0.01 t=10ms 0.3 1 3 10 30 100 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 2SD1474 Thermal resistance Rth(t) (˚C/W) 102 (1) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3