2SD1478A

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 0.65±0.15 2.8 –0.3 +0.2 1.5 –0.05 +0.25 0.65±0.15 2.9 –0.05 1.9±0.2 +0.2 q q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. (Ta=25˚C) Ratings 30 60 25 50 5 750 500 200 150 –55 ~ +150 Unit V 0.95 1 0.95 3 0.4 –0.05 +0.1 2 1.45 s Features 1.1 –0.1 Collector to base voltage Collector to 2SD1478 2SD1478A 2SD1478 VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1478A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 2N(2SD1478) 2O(2SD1478A) Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1478 2SD1478A 2SD1478 2SD1478A 0 to 0.1 Parameter Symbol 0.1 to 0.3 0.4±0.2 0.8 s Absolute Maximum Ratings (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = –50mA, f = 200MHz 200 *2 E min typ max 100 100 0.16 –0.06 +0.2 +0.1 Unit nA nA V 30 60 25 50 5 4000 20000 2.5 3.0 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency *1h FE1 V V MHz Rank classification Rank hFE1 Q R 4000 ~ 10000 8000 ~ 20000 2SD1478 2SD1478A 2NQ 2OQ 2NR 2OR Pulse measurement Marking Symbol 1 Transistor PC — Ta 240 1000 300 2SD1478, 2SD1478A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IB=50µA 45µA 40µA 35µA 100 30 10 3 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 VCE(sat) — IC IC/IB=1000 Collector power dissipation PC (mW) 200 Collector current IC (mA) 100 30 10 3 1 0.3 160 25˚C Ta=75˚C 120 80 30µA 25µA 20µA 15µA 10µA 5µA 40 0 0 40 80 120 160 200 0.1 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC 105 Cob — VCB Collector output capacitance Cob (pF) VCE=10V 6 IE=0 f=1MHz Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 30 10 25˚C 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 104 25˚C Ta=75˚C 5 4 –25˚C 103 3 2 102 1 0.1 0.3 1 3 10 10 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2