2SD1480

Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s q q q Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 60 6 4 2 25 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 14.0±0.5 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Solder Dip s Absolute Maximum Ratings 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 30V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 0.1A VCE = 4V, IC = 1A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 1MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 20 0.2 3.5 0.7 60 35 70 250 1.2 2 V V MHz µs µs µs min typ max 200 300 1 Unit µA µA mA V FE2 Rank classification Q 70 to 150 P 120 to 250 Rank hFE2 1 Power Transistors PC — Ta 40 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) TC=25˚C 5 IB=100mA 80mA 3 50mA 40mA 2 30mA 20mA 1 5 0 0 25 50 75 100 125 150 (3) (4) 0 0 2 4 6 8 10 12 10mA 5mA 1mA 0 0 0.5 1.0 1.5 25˚C TC=100˚C 4 –25˚C 2SD1480 IC — VCE 6 VCE=4V IC — VBE Collector power dissipation PC (W) 35 30 25 20 15 10 (2) (1) Collector current IC (A) Collector current IC (A) 4 3 2 1 2.0 2.5 3.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 25˚C 10000 hFE — IC 1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100˚C 25˚C –25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 1ms t=10ms 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2