2SD1535

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm s Features q q q q Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 400 12 14 7 0.5 50 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *V CEO(sus) (TC=25˚C) Symbol ICBO ICEO IEBO VCEO(sus)* hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 IC = 100mA, RBZ = ∞, L = 25mH VCE = 2V, IC = 2A VCE = 2V, IC = 6A IC = 7A, IB = 70mA IC = 7A, IB = 70mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 70mA, IB2 = –70mA, VCC = 300V X L 25mH Y 15V G 80 min typ max 0.1 0.1 100 Unit mA mA mA mA 400 500 200 2.0 2.5 20 1.5 5.0 6.5 V V MHz µs µs µs Test circuit 60Hz IC(A) 0.2 0.1 VCE(V) 120Ω 6V 1Ω 1 Power Transistors PC — Ta 100 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) (1) 40 TC=25˚C 2SD1535 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=100 30 10 TC=100˚C 3 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) 80 8 IB=20mA 10mA 60 6 5mA 4 3mA 20 (2) 0 0 25 50 75 100 125 150 (3) (4) 2 2mA 1mA 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 100000 IC/IB=100 hFE — IC 100 VCE=2V 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=100 (IB1=–IB2) VCC=300V TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 10 3 TC=–25˚C 1 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C 30000 tstg 10000 Switching time ton,tstg,tf (µs) 10 3 1 ton 0.3 0.1 0.03 0.01 3000 1000 300 100 30 10 0.01 0.03 tf TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 1 2 3 4 5 6 7 8 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 ICP 102 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 10 IC 3 DC 1 0.3 0.1 0.03 0.01 1 3 10 30 1ms t=0.1ms Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 (2) 1 10–1 100 300 1000 10–2 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2