2SD1741A

Power Transistors 2SD1741, 2SD1741A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 7.2±0.3 0.8±0.2 1.0±0.2 q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 200 150 180 6 3 2 15 1.3 150 –55 to +150 Unit V 10.0 –0. +0.3 s Features 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1741 2SD1741A 2SD1741 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 10.2±0.3 7.2±0.3 1.0 max. emitter voltage 2SD1741A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 2.5 V A A W ˚C ˚C 1.1±0.1 1 2 3 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1741 2SD1741A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 50µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A, f = 1MHz min typ max 50 50 1.0 V Unit µA µA V V V 200 150 180 6 60 50 1 1 20 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h FE1 MHz Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 2.5±0.2 2.5±0.2 1.0 V V 1 Power Transistors PC — Ta 20 1.2 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25˚C 1.0 IB=7mA 2SD1741, 2SD1741A IC — VCE 1.2 VCE=10V 1.0 25˚C TC=100˚C 0.8 –25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) 0.8 5mA 4mA 10 0.6 3mA 0.4 2mA 0.2 Collector current IC (A) 24 6mA 0.6 0.4 5 1mA 0.2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 10000 hFE — IC 1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Forward current transfer ratio hFE 3 1000 300 100 –25˚C 30 10 3 1 0.01 0.03 TC=100˚C 25˚C 1 TC=100˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 3 1 5ms 0.3 0.1 0.03 0.01 1 3 10 30 300ms ICP IC t=1ms 102 (1) (2) 10 1 2SD1741A 2SD1741 100 300 1000 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2