2SD1749

Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A q q q 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 8 4 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 s Features 1.1±0.1 1.0±0.2 10.0 –0. +0.3 0.85±0.1 0.4±0.1 0.75±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1749 2SD1749A 2SD1749 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.3±0.2 4.6±0.4 1 2 3 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SD1749A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V 10.2±0.3 3.0±0.2 1.0 max. A W ˚C ˚C 2.3±0.2 4.6±0.4 1.1±0.1 2.5 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1749 2SD1749A 2SD1749 2SD1749A 2SD1749 2SD1749A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V 20 0.5 4 1 60 80 1000 2000 min typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max 200 200 500 500 2 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 10000 2.5 2 4 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Internal Connection B C Rank hFE2 E 2.5±0.2 A 7.2±0.3 1.0 2.5±0.2 1.0 1 Power Transistors PC — Ta 20 10 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25˚C IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 4 2SD1749, 2SD1749A IC — VCE 10 VCE=3V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) Collector current IC (A) 8 8 25˚C 6 TC=100˚C –25˚C 6 10 4 5 2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 2 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C 105 hFE — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=3V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 0.1 104 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C t=10ms Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 10 ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 300ms Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 (1) (2) 10 1ms 1 2SD1749A 2SD1749 30 100 300 1000 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2