2SD1750A

Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 7 12 8 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1750 2SD1750A 2SD1750 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 7.2±0.3 1.0 max. Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V A A 10.2±0.3 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 W 1 2 3 ˚C ˚C 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1750 2SD1750A 2SD1750 2SD1750A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf IC = 4A, IB1 = 8mA, IB2 = –8mA Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4V, IB = 8mA IC = 4V, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz 20 0.5 4 1 60 80 2000 500 1.5 2 V V MHz µs µs µs 10000 min typ max 100 100 2 Unit µA mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q P Internal Connection B C Rank hFE1 2000 to 5000 4000 to 10000 E 2.5±0.2 1.0 2.5±0.2 1.0 emitter voltage 2SD1750A V 1 Power Transistors PC — Ta 20 12 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25˚C 10 2SD1750, 2SD1750A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) Collector power dissipation PC (W) Collector current IC (A) 15 (1) 3 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 2 1 10 6 0.3 4 0.1 5 0.03 (2) 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 0.01 0.1 0.3 1 3 10 30 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=500 TC=100˚C 3 25˚C –25˚C VBE(sat) — IC 100000 hFE — IC IC/IB=500 VCE=3V Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 30000 TC=100˚C 25˚C –25˚C 3 TC=–25˚C 1 100˚C 25˚C 10000 1 3000 1000 300 100 30 10 0.1 0.3 0.3 0.1 0.1 0.03 0.03 0.01 0.1 0.3 1 3 10 30 0.01 0.1 0.3 1 3 10 30 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms 1ms t=10ms Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 102 (1) (2) 10 1 2SD1750A 2SD1750 100 300 1000 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2