2SD1773

Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 7.5±0.2 s Features q q q 0.7±0.1 4.2±0.2 Unit: mm 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 120 7 12 8 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 –0.1 +0.2 2.54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage E (TC=25˚C) Symbol ICBO ICEO VCEO(sus) VEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 120V, IE = 0 VCE = 100V, IB = 0 IC = 2A, L = 10mH IE = 50mA, IC = 0 VCE = 3V, IC = 4A IC = 4A, IB = 8mA IC = 8A, IB = 80mA IC = 4A, IB = 8mA IC = 8A, IB = 80mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 20 0.7 6 2 120 7 1000 20000 1.5 3 2 3.5 V V V V MHz µs µs µs min typ max 100 10 Unit µA µA V V Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 1 Power Transistors PC — Ta 80 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) (1) TC=25˚C IB=5mA 2SD1773 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE(sat) — IC (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25˚C (1) Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (3) Collector current IC (A) 8 4mA 3mA 10 6 2mA 3 (2) 1mA 4 0.5mA 1 (3) 2 0.2mA 0.3 0 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 30 (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25˚C 30000 hFE — IC 100 VCE=3V 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=500 (IB1=–IB2) VCC=50V TC=25˚C Forward current transfer ratio hFE Switching time ton,tstg,tf (µs) 10 10000 TC=100˚C 10 3 tstg 3 (1) 1 (2) 3000 –25˚C 25˚C tf 1 0.3 0.1 0.03 ton (3) 1000 0.3 300 0.1 0.1 0.3 1 3 10 100 0.1 0.01 0.3 1 3 10 0 1 2 3 4 5 6 7 8 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25˚C ICP 10 IC 3 10ms 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC t=1ms Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 (2) 1 10–1 10–2 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2