2SD1776

Power Transistors 2SD1776, 2SD1776A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio s Features q q 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg (TC=25˚C) Ratings 80 100 60 80 6 4 2 0.5 25 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current 2SD1776 2SD1776A (TC=25˚C) Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 300mA IC = 1A, IB = 25mA IC = 1A, IB = 25mA VCE = 12V, IC = 200mA, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, IB1 = 25mA, IB2 = –25mA, VCC = 50V 40 30 0.6 2.5 1 60 80 500 1500 1 1.2 V V MHz pF µs µs µs min typ max 100 100 100 100 Unit µA µA µA V Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1776 2SD1776A VCEO hFE* VCE(sat) VBE(sat) fT Cob ton tstg tf Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE Rank classification Q P hFE 500 to 1000 800 to 1500 Rank 1 Power Transistors PC — Ta 40 1.6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.4 IB=3mA 1.2 2mA 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 2SD1776, 2SD1776A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=40 Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 (2) (3) (4) (1) Collector current IC (A) 3 TC=100˚C 1 25˚C 1mA 0.8mA 0.6mA 0.4mA 0.2mA 0.1mA 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100000 hFE — IC 1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 IC/IB=40 fT — IC VCE=12V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 3 10000 TC=100˚C 25˚C –25˚C 300 100 30 10 0.01 0.03 1 TC=–25˚C 100˚C 25˚C 3000 1000 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 0.1 0.3 1 3 10 Transition frequency fT (MHz) 30000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=–IB2) VCC=50V TC=25˚C tstg 3 1 0.3 0.1 0.03 0.01 0 0.5 1.0 1.5 2.0 2.5 tf ton Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Switching time ton,tstg,tf (µs) Collector current IC (A) 10 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms DC t=1ms 100 2SD1776A 300 2SD1776 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SD1776, 2SD1776A Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3