2SD1819A

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A 2.1±0.1 Unit: mm s Features q q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 50 7 200 100 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : Z s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob * Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 100 0.15–0.05 s Absolute Maximum Ratings +0.1 (Ta=25˚C) 0.2 0.3–0 +0.1 Unit µA µA V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF FE1 Rank classification Rank hFE1 Q 160 ~ 260 ZQ R 210 ~ 340 ZR S 290 ~ 460 ZS Marking Symbol 1 Transistor PC — Ta 240 60 Ta=25˚C IB=160µA 200 50 1000 2SD1819A IC — VCE 1200 VCE=10V Ta=25˚C IB — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 40 Base current IB (µA) 140µA 120µA 100µA 30 80µA 20 60µA 40µA 10 20µA 800 120 600 80 400 40 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — VBE 200 VCE=10V 200 240 VCE=10V Ta=25˚C IC — I B Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) — IC IC/IB=10 Collector current IC (mA) Collector current IC (mA) 160 160 120 25˚C Ta=75˚C 80 –25˚C 120 80 25˚C Ta=75˚C –25˚C 40 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base current IB (µA) Collector current IC (mA) hFE — IC 600 VCE=10V 300 fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 30 100 240 400 Ta=75˚C 25˚C 180 300 –25˚C 120 200 100 60 0 0.1 0.3 1 3 10 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Emitter current IE (mA) 2