2SD1820

Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm s Features q q 2.0±0.2 1.3±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit 0.65 1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 0.2 0.9±0.1 0.7±0.1 V emitter voltage 2SD1820A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector 0 to 0.1 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : W(2SD1820) X(2SD1820A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1820 2SD1820A 2SD1820 2SD1820A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 0.15–0.05 +0.1 0.3–0 +0.1 Unit µA V 30 60 25 50 5 85 40 0.35 200 6 *2 V V 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 0.6 V MHz 15 pF Pulse measurement Rank classification Rank hFE1 Q 85 ~ 170 2SD1820 2SD1820A WQ XQ R 120 ~ 240 WR XR S 170 ~ 340 WS XS Marking Symbol 1 Transistor PC — Ta 240 800 700 200 2SD1820, 2SD1820A IC — VCE Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 400 300 200 100 3mA 2mA 1mA 800 VCE=10V Ta=25˚C 700 IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 600 500 Collector current IC (mA) 20 600 500 400 300 200 100 0 160 120 80 40 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.01 0.03 –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 240 12 Cob — VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB=10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 120 VCER — RBE IC=2mA Ta=25˚C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 2SD1820A 40 2SD1820 20 80 4 40 2 0 –1 0 –3 –10 –30 –100 1 3 10 30 100 0 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2