2SD1892

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –120 –100 –5 –8 –5 45 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –120V, IE = 0 VCE = –100V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –4A IC = –4A, IB = –4mA IC = –4A, IB = –4mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –4A, IB1 = –4mA, IB2 = 4mA, VCC = –50V 20 1.0 0.8 1.0 –100 2000 5000 30000 –2.5 –3.0 V V MHz µs µs µs min typ max –100 –100 –100 Unit µA µA µA V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 1 Power Transistors PC — Ta 60 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (1) (4) Without heat sink (PC=2W) TC=25˚C –5 2SB1252 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 VCE(sat) — IC IC/IB=1000 Collector power dissipation PC (W) 50 –30 Collector current IC (A) IB=– 0.5mA –4 – 0.4mA – 0.3mA 40 –10 30 –3 –3 TC=100˚C –1 25˚C –25˚C 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4) –2 – 0.2mA 10 –1 – 0.1mA – 0.3 0 0 –2 –4 –6 –8 –10 –12 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC 100000 VCE=5V 1000 25˚C Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 –30 TC=100˚C 300 10000 –25˚C –10 100 3000 1000 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –3 TC=–25˚C –1 100˚C 25˚C 30 10 – 0.3 3 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 –1 –3 –10 1 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C ton tf 1 0.3 0.1 0.03 0.01 0 –2 –4 –6 –8 tstg Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP t=1ms –3 –1 IC 10ms DC Switching time ton,tstg,tf (µs) 10 3 Collector current IC (A) –10 – 0.3 – 0.1 – 0.03 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SB1252 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3