2SD1975

Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings –180 –180 –5 –25 –15 150 3.5 150 –55 to +150 Unit V V V A 26.0±0.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = –180V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –8A VCE = –5V, IC = –8A IC = –10A, IB = –1A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz 20 450 20 60 20 –1.8 –2.5 V V MHz pF 200 min typ max –50 –50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC — Ta 200 2SB1317 IC — VCE –24 TC=25˚C –20 IB=–1000mA –800mA –700mA –600mA –500mA –400mA –300mA –200mA –8 –150mA –100mA –4 –50mA –24 VCE=–5V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 150 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) –18 25˚C TC=–25˚C –12 100˚C –16 100 –12 50 –6 (2) 0 0 20 40 (3) 0 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 0 –1 –2 –3 –4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –10 IC/IB=10 25˚C TC=100˚C –1 –25˚C 1000 hFE — IC VCE=–5V 1000 fT — IC VCE=–10V f=1MHz TC=25˚C Forward current transfer ratio hFE –3 300 TC=100˚C 100 –25˚C 30 25˚C Transition frequency fT (MHz) –10 –30 –100 300 100 – 0.3 30 – 0.1 10 10 – 0.03 3 3 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –100 1 – 0.1 – 0.3 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 Area of safe operation (ASO) –100 IE=0 f=1MHz TC=25˚C –30 ICP IC 100ms –3 DC –1 Non repetitive pulse TC=25˚C t=10ms Collector output capacitance Cob (pF) 3000 Collector current IC (A) –3 –10 –30 –100 –10 1000 300 100 – 0.3 – 0.1 – 0.03 30 10 –1 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SB1317 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3