2SD1979

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 2.1±0.1 0.425 1.25±0.1 0.425 Unit: mm 0.65 q q q Low ON resistance Ron. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 50 20 25 500 300 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : 3W s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON resistanse *1h (Ta=25˚C) Symbol ICBO IEBO VCEO hFE*1 VCE(sat) VBE fT Cob Ron*2 *2R on Conditions VCB = 50V, IE = 0 VEB = 25V, IC = 0 IC = 1mA, IB = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = –4mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 1 0.15–0.05 s Absolute Maximum Ratings 0.2 +0.1 0.3–0 +0.1 s Features Unit µA µA V 20 500 2500 0.1 0.6 80 4.5 1.0 V V MHz pF Ω FE Rank classification Rank hFE S 500 ~ 1500 3WS T 800 ~ 2500 3WT Measurement circuit 1kΩ IB=1mA f=1kHz V=0.3V Marking Symbol VB VV VA Ron= VB !1000(Ω) VA–VB 1 Transistor PC — Ta 240 24 Ta=25˚C 200 20 100 2SD1979 IC — VCE 120 VCE=2V 25˚C Ta=75˚C –25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 16 9µA 8µA 7µA 6µA 5µA 4µA 3µA 2µA 1µA Base current IB (mA) 12 IB=10µA 80 120 12 60 80 8 40 40 4 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.1 Ta=75˚C 25˚C –25˚C IC/IB=10 2400 hFE — IC 120 VCE=2V fT — I E VCB=6V Ta=25˚C Forward current transfer ratio hFE 2000 Transition frequency fT (MHz) 30 100 300 1000 100 1600 Ta=75˚C 25˚C –25˚C 800 80 1200 60 40 400 20 0 0.3 1 3 10 30 100 1 3 10 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 12 Collector output capacitance Cob (pF) 10 f=1MHz IE=0 Ta=25˚C 8 6 4 2 0 1 3 10 30 100 Collector to base voltage VCB (V) 2