2SD1985A

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Features 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1985 2SD1985A 2SD1985 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 6 5 3 25 2 150 –55 to +150 Unit 14.0±0.5 emitter voltage 2SD1985A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 V 16.7±0.3 7.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1985 2SD1985A 2SD1985 2SD1985A 2SD1985 2SD1985A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.5 2.5 0.4 60 80 70 10 1.8 1.2 V V MHz µs µs µs 250 min typ max 200 200 300 300 1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors PC — Ta 40 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink 30 TC=25˚C 2SD1985, 2SD1985A IC — VCE 8 VCE=4V 7 25˚C 6 5 4 3 2 1 TC=100˚C –25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 1 10mA 3 (1) 20 2 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) 4 Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=8 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 –25˚C TC=100˚C 25˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=5V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) –10 –3 ICP IC DC 10ms 10000 Non repetitive pulse TC=25˚C t=1ms Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink –1 – 0.3 – 0.1 – 0.03 – 0.01 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1000 100 (1) (2) 10 2SD1985 – 0.003 – 0.001 –1 2SD1985A 1 –3 –10 –30 –100 –300 –1000 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2