2SD1991A

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05 0.45–0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 1 2.5±0.5 2 2.5±0.5 3 60 50 7 200 100 400 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.1 Ratings Unit +0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 1 14.5±0.5 0.85 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 s Features 0.15 0.7 4.0 0.8 Unit µA µA V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF FE1 Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC — Ta 500 60 Ta=25˚C IB=160µA 50 1000 2SD1991A IC — VCE 1200 VCE=10V Ta=25˚C IB — VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 40 Base current IB (µA) 140µA 120µA 100µA 30 80µA 20 60µA 40µA 10 20µA 800 300 600 200 400 100 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — VBE 200 VCE=10V 200 240 VCE=10V Ta=25˚C IC — I B Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) — IC IC/IB=10 Collector current IC (mA) Collector current IC (mA) 160 160 120 25˚C Ta=75˚C 80 –25˚C 120 80 25˚C 40 Ta=75˚C –25˚C 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base current IB (µA) Collector current IC (mA) hFE — IC 600 VCE=10V 1000 hFE — IC 300 VCE=5V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE Forward current transfer ratio hFE 500 800 Transition frequency fT (MHz) 100 1000 240 400 Ta=75˚C 25˚C 600 Ta=125˚C 75˚C 180 300 –25˚C 400 200 25˚C –25˚C 120 100 200 60 0 0.1 0.3 1 3 10 30 100 0 0.1 1 10 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) 2 Transistor Cob — VCB 12 2SD1991A NV — IC IE=0 f=1MHz Ta=25˚C 240 VCE=10V Ta=25˚C Function=FLAT 100 h Parameter — IC VCE=5V f=270Hz Collector output capacitance Cob (pF) 10 200 30 6 120 Rg=100kΩ h Parameter 8 Noise voltage NV (mV) 160 10 hfe (×100) 3 4 80 22kΩ 4.7kΩ 1 hoe (10–1µS) hre (×10–4) 2 40 0.3 hie (×10kΩ) 0 1 3 10 30 100 0 10 30 100 300 1000 0.1 0.1 0.3 1 3 10 Collector to base voltage VCB (V) Collector current IC (µA) Collector current IC (mA) 3