Transistors
2SD1992A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB1321A I Features
• Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
6.9±0.1
0.15
0.7
4.0
1.05 2.5±0.1 (1.45) ±0.05 0.8
0.65 max.
1.0
0.45−0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 7 1 500 600 150 −55 to +150 Unit V V V A mA mW °C °C
1
2
3
0.45−0.05
2.5±0.5
2.5±0.5
+0.1
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1: Emitter 2: Collector 3: Base MT1 Type Package
1.2±0.1 0.65 max. 0.45+ 0.1 − 0.05
2.5±0.1
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No-rank 85 to 340 VCBO VCEO VEBO hFE1 *2 hFE2 *1 VCE(sat) fT Cob Conditions VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 60 50 7 85 40 90 0.35 200 6 15 0.6 V MHz pF 340 Min Typ Max 0.1 1 Unit µA µA V V V
Product of no-rank is not classified and have no indication for rank.
14.5±0.5
0.85
3.5±0.1
0.8
1
2SD1992A
PC Ta
800
Transistors
IC VCE
800 700 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700
IC IB
VCE = 10 V Ta = 25°C
Collector power dissipation PC (mW)
700
Collector current IC (mA)
600 500 400 300 200 100 0
600 500
Collector current IC (mA)
600 500 400 300 200 100 0
0
20
40
60
80 100 120 140 160
0
2
4
6
8 10 12 14 16 18 20
0
1
2
3
4
5
6
7
8
9 10
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta = 75°C 25°C −25°C
VBE(sat) IC
100
hFE IC
300 VCE = 10 V
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
30
Forward current transfer ratio hFE
250 Ta = 75°C 200 25°C −25°C
10 3 1 Ta = 75°C −25°C 0.3 0.1 0.03 0.01 0.01 0.03
25°C
150
100
50
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT IE
240 12
Cob VCB
Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V)
VCB = 10 V Ta = 25°C IE = 0 f = 1 MHz Ta = 25°C
120
VCER RBE
IC = 2 mA Ta = 25°C 100
Transition frequency fT (MHz)
200
10
160
8
80
120
6
60
80
4
40
40
2
20
0 −1
−2 −3 −5
−10
−20−30 −50 −100
0
0
1
2
3
5
10
20 30 50
100
1
3
10
30
100
300
1000
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (kΩ)
2
Transistors
ICEO Ta
104 VCE = 10 V
2SD1992A
103
ICEO (Ta) ICEO (Ta = 25°C)
102
10
1
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (°C)
3
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