2SD1996

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45–0.05 +0.1 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –25V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 150 15 *2 min typ max –100 –1 14.5±0.5 0.85 Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 s Features 0.15 0.7 4.0 0.8 Unit nA µA V V V –25 –20 –7 90 25 – 0.4 –1.2 350 V V MHz VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 25 pF Pulse measurement FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 180 ~ 350 Rank hFE1 1 Transistor PC — Ta 800 –1.2 Ta=25˚C 700 –1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 –1 –2 –3 –4 –5 –6 IB=–10mA 2SB1378 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) – 0.8 –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA – 0.6 – 0.4 – 0.3 – 0.1 – 0.03 – 0.2 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC IC/IB=10 600 VCE=–2V 320 fT — I E VCB=–10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) –1 –3 –10 –30 –10 –3 25˚C –1 Ta=–25˚C 75˚C Forward current transfer ratio hFE 280 240 200 160 120 80 40 400 300 Ta=75˚C 25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 200 –25˚C 100 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 80 Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 –1 IE=0 f=1MHz Ta=25˚C –3 –10 –30 –100 Collector to base voltage VCB (V) 2