2SD2052

Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 150 150 5 15 9 100 3 150 –55 to +155 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 150V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 7A VCE = 5V, IC = 7A IC = 7A, IB = 0.7A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 150 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 1 Power Transistors PC — Ta 120 20 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) TC=25˚C IB=1000mA 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA 8 100mA 4 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 50mA 2SD2052 IC — VCE 20 VCE=5V IC — VBE Collector power dissipation PC (W) 100 Collector current IC (A) Collector current IC (A) 16 16 25˚C 12 TC=–25˚C 100˚C 80 12 60 8 40 20 4 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.1 TC=100˚C 25˚C –25˚C 10000 hFE — IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=5V f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 25˚C 30 10 3 1 0.1 –25˚C TC=100˚C 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25˚C 30 ICP Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) 3000 Collector current IC (A) 10 IC 3 100ms 1 0.3 0.1 0.03 DC t=10ms 1000 300 100 30 10 1 3 10 30 100 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SD2052 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3