2SD2137

Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 6 5 3 15 2 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 emitter voltage 2SD2137A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 0.55±0.1 C1.0 123 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2137 2SD2137A 2SD2137 2SD2137A 2SD2137 2SD2137A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.3 2.5 0.2 60 80 70 10 1.8 1.2 V V MHz µs µs µs 250 min typ max 100 100 100 100 100 Unit µA µA µA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors PC — Ta 20 6 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 (1) TC=25˚C 5 2SD2137, 2SD2137A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=8 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 –25˚C 25˚C VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) 4 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 10 3 2 20mA 5 10mA 1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) IC — VBE 6 VCE=4V 1000 hFE — IC VCE=4V TC=100˚C 25˚C –25˚C 100 1000 fT — IC VCE=5V f=10MHz TC=25˚C Forward current transfer ratio hFE 5 300 Transition frequency fT (MHz) 0.3 1 3 10 300 Collector current IC (A) 4 100 3 TC=100˚C 2 25˚C 30 30 10 10 1 –25˚C 3 3 0 0 0.4 0.8 1.2 1.6 2.0 1 0.01 0.03 0.1 1 0.01 0.03 0.1 0.3 1 3 10 Base to emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C tstg 3 1 0.3 0.1 0.03 ton tf Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 Collector current IC (A) 10 10 3 1 0.3 0.1 0.03 0.01 ICP IC 10ms DC t=1ms 100 30 10 3 1 1 3 10 30 100 0.01 0 1 2 3 4 1 3 10 30 100 2SD2137A 300 2SD2137 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 2SD2137, 2SD2137A Thermal resistance Rth(t) (˚C/W) 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3