2SD2138

Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0.2 4.2±0.2 Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 123 emitter voltage 2SB1418A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 2.5±0.2 2.5±0.2 V A A W ˚C ˚C B 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1418 2SB1418A 2SB1418 2SB1418A 2SB1418 2SB1418A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton toff Conditions VCB = –60V, IB = 0 VCB = –80V, IB = 0 VCE = –30V, IB = 0 VCE = –40V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –2A VCE = –4V, IC = –2A IC = –2A, IB = –8mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –2A, IB1 = –8mA, IB2 = 8mA, VCC = –50V 20 0.2 2 –60 –80 1000 2000 10000 –2.8 –2.5 V V MHz µs µs min typ max –100 –100 –100 –100 –100 Unit µA µA µA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time *h FE2 Rank classification Q P Rank hFE2 2000 to 5000 4000 to 10000 1 Power Transistors PC — Ta 20 –6 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25˚C –5 2SB1418, 2SB1418A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=250 –30 –10 TC=100˚C –3 –1 25˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) –4 (1) 10 –1.6mA –1.8mA –1.4mA –1.2mA IB=–2.0mA –1.0mA – 0.8mA – 0.6mA – 0.4mA –3 –2 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 5 –1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 – 0.2mA –10 –12 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) IC — VBE –6 VCE=–4V 100000 hFE — IC 1000 Cob — VCB Collector output capacitance Cob (pF) VCE=–4V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE –5 30000 TC=100˚C 25˚C 300 Collector current IC (A) 10000 –4 TC=100˚C –3 25˚C 100 3000 –25˚C 1000 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 30 –2 10 –1 –25˚C 3 0 0 –1 –2 –3 –4 –1 –3 –10 1 –1 –3 –10 –30 –100 Base to emitter voltage VBE (V) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C 10000 Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink –10 ICP –3 –1 IC 10ms DC t=1ms Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1000 100 (1) (2) – 0.3 – 0.1 – 0.03 – 0.01 –1 10 2SB1418A 2SB1418 1 –3 –10 –30 –100 –300 –1000 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2