2SD2138A

Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A 5.0±0.1 Unit: mm 13.0±0.2 4.2±0.2 s Features q q 10.0±0.2 1.0 2.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 2 150 –55 to +150 Unit V 2SD2138 2SD2138A 2SD2138 C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 Collector to base voltage Collector to 0.55±0.1 C1.0 emitter voltage 2SD2138A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A 2.5±0.2 123 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection W ˚C ˚C E B C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2138 2SD2138A 2SD2138 2SD2138A 2SD2138 2SD2138A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton toff * Conditions VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 50V min typ max 100 100 100 100 100 Unit µA µA µA V 60 80 1000 2000 10000 2.8 2.5 20 0.4 4 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time *h FE2 V V MHz µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 20 6 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25˚C 5 2SD2138, 2SD2138A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) 15 (1) IB=2mA 4 10 3 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 2 0.2mA 5 1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) IC — VBE 6 VCE=4V 5 105 hFE — IC Collector output capacitance Cob (pF) VCE=4V 1000 Cob — VCB IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 25˚C Collector current IC (A) TC=100˚C 4 –25˚C TC=100˚C 104 300 25˚C 100 3 30 –25˚C 103 2 10 1 3 0 0 1 2 3 4 102 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C 10000 Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 10 ICP 3 1 0.3 10ms 0.1 0.03 0.01 1 3 10 30 IC DC t=1ms Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1000 100 (1) (2) 10 2SD2138A 2SD2138 1 100 300 1000 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2