2SD2139

Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 80 60 6 6 3 1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 123 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE fT * Conditions VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz min typ max 100 100 100 Unit µA µA µA V 60 500 2500 1 50 VCE(sat) V MHz *h FE Rank classification Q P O Rank hFE 500 to 1000 800 to 1500 1200 to 2500 1 Power Transistors PC — Ta 20 1.2 (1) TC=Ta (2) Without heat sink (PC=2.0W) 2SD2139 IC — VCE IB=1.6mA 1.4mA 1.2mA 1.0mA 0.8 0.8mA 0.6mA 6 TC=25˚C 5 VCE=4V IC — VBE Collector power dissipation PC (W) 1.0 Collector current IC (A) 15 (1) Collector current IC (A) 4 10 0.6 3 TC=100˚C 2 25˚C 1 –25˚C 0.4mA 0.4 5 0.2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 0.2mA 0 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=40 30 10 TC=100˚C 3 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 10000 hFE — IC VCE=4V 1000 fT — IC VCE=12V f=10MHz TC=25˚C Forward current transfer ratio hFE 3000 TC=100˚C Transition frequency fT (MHz) 3 10 300 1000 25˚C 300 –25˚C 100 30 100 10 30 3 25˚C 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25˚C 30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) 300 Collector current IC (A) 10 3 1 0.3 0.1 0.03 ICP t=10ms IC DC 1ms 100 30 10 3 1 1 3 10 30 100 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 2SD2139 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3