2SD2177A

Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 60 60 5 2 3 1 150 –55 ~ +150 1cm2 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC ICP PC*1 Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.5±0.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 200mA VCE = 2V, IC = 1A*2 IC = 1A, IB = 50mA*2 IC = 1A, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 60 60 5 120 80 0.15 0.85 110 23 *2 14.5±0.5 Unit µA V V V 340 hFE2*1 VCE(sat) VBE(sat) fT Cob 0.3 1.2 V V MHz 35 pF Pulse measurement *1h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 2.0 2SD2177A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=100˚C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25˚C –25˚C VCE(sat) — IC IC/IB=20 Collector power dissipation PC (W) 1.0 0.8 Collector current IC (A) 1.6 IB=8mA 1.2 7mA 6mA 5mA 4mA 3mA 0.4 2mA 1mA 0.6 0.4 0.8 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 500 VCE=2V 200 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 400 Transition frequency fT (MHz) 1 3 10 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 100˚C Forward current transfer ratio hFE 160 300 Ta=100˚C 25˚C 120 200 –25˚C 100 80 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 60 Collector output capacitance Cob (pF) 50 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2