2SD2179

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 50 50 5 7 5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board +0.1 s Absolute Maximum Ratings 0.45–0.05 +0.1 (Ta=25˚C) 2.5±0.5 2.5±0.5 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 500mA*2 VCE = 2V, IC = 2.5A*2 IC = 2A, IB = 100mA*2 IC = 2A, IB = 100mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 50 50 5 120 60 0.19 0.85 80 60 *2 14.5±0.5 Unit µA V V V 340 0.3 1.2 V V MHz 70 pF Pulse measurement *1h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 2.0 2SD2179 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 –25˚C 0.01 0.003 0.001 0.01 0.03 Ta=100˚C 25˚C VCE(sat) — IC IC/IB=20 Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 1.6 IB=8mA 7mA 0.6 1.2 6mA 5mA 0.4 0.8 4mA 3mA 0.2 0.4 2mA 1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=20 500 VCE=2V 200 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 400 Ta=100˚C Transition frequency fT (MHz) 1 3 10 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 100˚C Forward current transfer ratio hFE 160 300 25˚C 120 –25˚C 200 80 100 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 240 Collector output capacitance Cob (pF) 200 IE=0 f=1MHz Ta=25˚C 160 120 80 40 0 1 3 10 30 100 Collector to base voltage VCB (V) 2