2SD2185

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 50 50 5 4 3 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 3.0±0.15 2 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg * marking 1 150 –55 ~ +150 EIAJ:SC–62 Mini Power Type Package Marking symbol : 1H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 200mA VCE = 2V, IC = 1.0A IC = 1A, IB = 50mA IC = 1A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHZ min typ max 0.1 50 50 5 120 80 0.15 0.82 110 23 *2 340 0.3 1.2 35 Pulse measurement *1h FE1 Rank classification Rank hFE1 R 120 ~ 240 1HR S 170 ~ 340 1HS Marking Symbol 2.5±0.1 +0.25 Unit µA V V V V V MHz pF 1 Transistor PC — Ta 1.2 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 100 2SD2185 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=50 Collector power dissipation PC (W) 1.0 Collector current IC (mA) IB=400µA 80 350µA 300µA 60 250µA 200µA 40 150µA 100µA 50µA 0.8 0.6 0.4 0.2 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=50 300 VCE=2V 240 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75˚C 200 25˚C 150 –25˚C 100 Transition frequency fT (MHz) 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 100˚C Forward current transfer ratio hFE 200 160 25˚C 120 80 50 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 60 Collector output capacitance Cob (pF) 50 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2