2SD2215A

Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 10.0 –0. High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) 7.2±0.3 0.8±0.2 1.1±0.1 1.0±0.2 +0.3 0.85±0.1 0.4±0.1 0.75±0.1 2.3±0.2 4.6±0.4 Ratings 350 400 250 300 5 1.5 0.75 15 1.3 150 –55 to +150 Unit V 1 2 3 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SD2215A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V 3.0±0.2 10.2±0.3 7.2±0.3 A A W 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 ˚C ˚C 1 2 3 2.3±0.2 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2215 2SD2215A 2SD2215 2SD2215A 2SD2215 2SD2215A 4.6±0.4 (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.5 2 0.5 250 300 70 10 min typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max 1 1 1 1 1 Unit mA mA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 250 1.5 1 MHz µs µs µs Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 2.5±0.2 1.0 2.5±0.2 1.0 V V 1 Power Transistors PC — Ta 20 1.2 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25˚C 1.0 2SD2215, 2SD2215A IC — VCE 4.0 VCE=10V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 0.8 IB=14mA 12mA 10mA 8mA 6mA Collector current IC (A) (1) 3.2 25˚C TC=100˚C –25˚C 2.4 10 0.6 1.6 0.4 4mA 5 0.2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 2mA 0.8 0 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10000 10 IC/IB=10 hFE — IC 1000 VCE=10V 300 100 30 10 3 1 0.3 fT — IC VCE=10V f=10MHz TC=25˚C Forward current transfer ratio hFE TC=100˚C 3 1000 300 100 30 10 3 1 0.01 0.03 1 TC=100˚C 25˚C –25˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 Transition frequency fT (MHz) 0.3 1 3 10 3000 0.03 0.1 0.3 1 3 0.1 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25˚C ICP IC DC t=1ms 10ms 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 1000 Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 100 (1) (2) 1 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 2SD2215 2SD2215A 1 0.1 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2