2SD2225

Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 120 120 5 1 0.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board +0.1 s Absolute Maximum Ratings 0.45–0.05 +0.1 (Ta=25˚C) 2.5±0.5 2.5±0.5 (HW type) s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage (Ta=25˚C) Symbol VCEO VEBO hFE1 *1 Conditions IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 VCE = 5V, IC = 100mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz*2 VCB = 10V, IE = 0, f = 1MHz min 120 5 90 50 100 typ max 14.5±0.5 Unit V V 330 Forward current transfer ratio hFE2 hFE3 VCE(sat) VBE(sat) fT Cob Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance 0.15 0.9 200 11.5 *2 1 1.2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 185 ~ 330 Rank hFE1 1 Transistor PC — Ta 1.2 200 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 2SD2225 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.0 Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8 120 0.8mA 0.7mA 0.6mA 0.6 80 0.4 0.5mA 0.4mA 0.2 40 0.3mA 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 600 IC/IB=10 400 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 350 300 250 200 150 100 50 400 25˚C 300 Ta=75˚C 200 25˚C –25˚C 100 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 80 Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 1 3 10 IE=0 f=1MHz Ta=25˚C 30 100 Collector to base voltage VCB (V) 2