2SD2240

Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification 1.6±0.15 Unit: mm s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2240 2SD2240A 2SD2240 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 0.45±0.1 0.3 (Ta=25˚C) Ratings 150 185 150 185 5 100 50 125 125 –55 ~ +125 Unit V emitter voltage 2SD2240A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : P(2SD2240) L(2SD2240A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD2240 2SD2240A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ 0 to 0.1 0.2±0.1 max 1 +0.1 Unit µA V V 150 185 5 130 330 1 150 2.3 150 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage *1h VCE(sat) V MHz pF mV FE1 Rank classification Rank hFE R 130 ~ 220 2SD2240 2SD2240A PR LR S 185 ~ 330 PS LS Marking Symbol 1 Transistor PC — Ta 150 120 Ta=25˚C 125 100 2SD2240, 2SD2240A IC — VCE 120 VCE=10V 100 25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 100 80 75 60 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA Ta=75˚C 80 –25˚C 60 50 40 0.2mA 20 40 25 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75˚C 25˚C –25˚C IC/IB=10 600 hFE — IC 200 VCE=10V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 30 100 160 400 120 300 Ta=75˚C 25˚C –25˚C 80 200 100 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 5 Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2