2SD2242A

Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features 13.0±0.2 4.2±0.2 q q q 2.5±0.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip Ratings 60 80 60 80 5 8 4 15 2 150 –55 to +150 Unit V 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 emitter voltage 2SD2242A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C C1.0 123 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2242 2SD2242A 2SD2242 2SD2242A 2SD2242 2SD2242A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V 20 0.5 4 1 60 80 1000 2000 min typ E max 200 200 500 500 2 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 10000 2.5 2 4 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 20 10 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25˚C IB=4.0mA 2SD2242, 2SD2242A IC — VCE 10 VCE=3V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) Collector current IC (A) 8 6 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 8 25˚C 6 TC=100˚C –25˚C 10 4 4 5 (2) 2 2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C 105 hFE — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=3V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 0.1 TC=100˚C 104 25˚C –25˚C 103 102 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C 1000 Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 100 (1) (2) 10 10 ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 10ms DC t=1ms Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1 2SD2242 2SD2242A 0.1 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2