2SD2249

Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.15 (1.45) 0.8 0.5 4.5±0.1 s Features q q 0.7 4.0 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 40 20 7 8 5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 0.45–0.05 +0.1 s Absolute Maximum Ratings 0.45–0.05 +0.1 (Ta=25˚C) 2.5±0.5 2.5±0.5 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = –50mA, f = 200MHz*2 VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 0.1 20 7 230 150 0.3 150 50 *2 600 1 MHz pF Pulse measurement *1h FE1 Rank classification Q 230 ~ 380 R 340 ~ 600 Rank hFE1 14.5±0.5 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 Unit µA µA V V V 1 Transistor PC — Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 2.0 IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 5 2SD2249 IC — VCE 6 VCE=2V Ta=75˚C 25˚C –25˚C IC — VBE Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 Collector current IC (A) 4 0.6 3 0.4 2 0.2 1mA 1 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=30 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 100˚C IC/IB=30 600 hFE — IC VCE=2V Forward current transfer ratio hFE 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 400 350 300 250 200 150 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 100 Cob — VCB Collector output capacitance Cob (pF) VCB=6V Ta=25˚C IE=0 f=1MHz Ta=25˚C 80 Transition frequency fT (MHz) 60 40 20 0 –1 –3 –10 1 3 10 30 100 Emitter current IE (A) Collector to base voltage VCB (V) 2