2SD2250

Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 90 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1 2 3 A W ˚C ˚C B 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h E (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –6A IC = –6A, IB = –6mA IC = –6A, IB = –6mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –6A, IB1 = –6mA, IB2 = 6mA, VCC = –50V 20 1.0 1.5 1.2 140 2000 5000 30000 –2.5 –3.0 MHz µs µs µs V min typ max –100 –100 –100 Unit µA µA µA V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC — Ta 200 –12 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) IB=–5mA 2SB1490 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 VCE(sat) — IC IC/IB=1000 Collector power dissipation PC (W) –10 –30 150 Collector current IC (A) –8 100 (1) –6 –1mA – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA – 0.4mA – 0.3mA –10 TC=100˚C –3 25˚C –25˚C –1 –4 50 –2 (3) 0 0 20 40 60 80 100 120 140 160 (2) 0 0 –2 –4 –6 –8 – 0.2mA – 0.1mA –10 –12 – 0.3 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC 100000 VCE=–5V 1000 25˚C TC=100˚C –25˚C Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 –30 300 10000 –10 100 3000 1000 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –3 TC=–25˚C –1 100˚C 25˚C 30 10 – 0.3 3 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 –1 –3 –10 1 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C tstg tf ton Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP –10 IC –3 –1 10ms DC t=1ms Switching time ton,tstg,tf (µs) 10 3 1 0.3 0.1 0.03 0.01 0 –4 –8 –12 –16 Collector current IC (A) – 0.3 – 0.1 – 0.03 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SB1490 Thermal resistance Rth(t) (˚C/W) 300 100 (1) 30 10 3 1 0.3 0.1 10–3 (2) 10–2 10–1 1 10 102 103 104 Time t (s) 3