2SD2259

Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * VCBO VCEO VEBO ICP IC PC* Tj Tstg 1cm2 20 20 15 1.5 0.7 1 150 –55 ~ +150 V V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.5±0.1 Parameter Symbol Ratings Unit 1 2 3 0.45–0.05 +0.1 s Absolute Maximum Ratings 0.45–0.05 +0.1 (Ta=25˚C) 2.5±0.5 2.5±0.5 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 50mA* VCB = 20V, IE = –20mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 20 20 15 1000 0.15 55 10 *2 min typ max 1 10 2500 0.4 V MHz 15 pF Pulse measurement 14.5±0.5 Unit µA µA V V V 1 Transistor PC — Ta 1.2 200 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 2.0 90µA 120 80µA 70µA 60µA 80 50µA 40µA 40 30µA 20µA 10µA 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0 0 0.4 0.8 2SD2259 IC — VCE 2.4 VCE=10V IC — VBE Collector power dissipation PC (W) 1.0 Collector current IC (mA) 0.8 Collector current IC (A) 160 IB=100µA 1.6 25˚C Ta=75˚C –25˚C 0.6 1.2 0.4 0.8 0.2 0.4 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C 25˚C –25˚C IC/IB=10 3000 hFE — IC 300 VCE=10V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 2500 Ta=75˚C 25˚C –25˚C Transition frequency fT (MHz) 0.3 1 3 10 250 2000 200 1500 150 1000 100 500 50 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 24 Collector output capacitance Cob (pF) 20 IE=0 f=1MHz Ta=25˚C 16 12 8 4 0 1 3 10 30 100 Collector to base voltage VCB (V) 2