2SD2266

Power Transistors 2SD2266 Silicon NPN triple diffusion planar type For power switching Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 80 60 7 8 4 1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 123 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 4A VCE = 4V, IC = 4A IC = 4A, IB = 0.4A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 80 0.3 1.0 0.2 60 70 20 2.0 1.5 V V MHz µs µs µs 320 min typ max 100 100 Unit µA µA V FE1 Rank classification Q 70 to 150 P 120 to 250 O 160 to 320 Rank hFE1 1 Power Transistors PC — Ta 20 4 (1) TC=Ta (2) Without heat sink (PC=2.0W) IB=40mA TC=25˚C 35mA 5 TC=–25˚C 2SD2266 IC — VCE 6 VCE=4V 25˚C 100˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) 3 30mA 25mA 20mA Collector current IC (A) 8 4 10 2 15mA 10mA 3 2 5 (2) 1 5mA 1 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.01 0.03 –25˚C TC=100˚C 104 hFE — IC 1000 VCE=4V fT — IC VCE=12V f=10MHz TC=25˚C 100 Forward current transfer ratio hFE 103 TC=100˚C 102 25˚C –25˚C Transition frequency fT (MHz) 3 10 10 10 1 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 1 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C ICP IC 3 DC 1 0.3 0.1 0.03 t=1ms Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) Collector current IC (A) 8 1000 10 10 tstg 1 ton 0.1 tf 100 10 1 1 3 10 30 100 300 1000 0.01 0 1 2 3 4 5 6 7 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 100 (1) (2) 10 2SD2266 Thermal resistance Rth(t) (˚C/W) 1 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3