2SD2273

Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1500 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 100 80 5 6 3 45 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 2A, IB = 2mA IC = 2A, IB = 2mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 2mA, IB2 = –2mA, VCC = 50V 20 3.5 2.5 0.6 80 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V FE2 Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 2.0 1.5 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat):