2SD2357

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 10 10 5 1.2 1 1 150 –55 ~ +150 1cm2 Unit 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1M Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 7V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA** IC = 500mA, IB = 5mA VCB = 5V, IE = –50mA, f = 200MHz VCB = 5V, IE = 0, f = 1MHz 120 30 ** min typ max 1 Unit µA V V V 10 10 5 200 800 0.15 MHz pF Pulse measurement 2.5±0.1 +0.25 V 1 Transistor PC — Ta 1.4 2SD2357 IC — VCE 1.2 Ta=25˚C 1.0 1.0 25˚C Ta=75˚C 0.8 –25˚C 1.2 VCE=2V IC — VBE Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 0.8 3.0mA 2.5mA 0.8 0.6 Collector current IC (A) IB=3.5mA 2.0mA 1.5mA 0.6 0.6 0.4 1.0mA 0.2 0.4 0.4 0.2 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C IC/IB=100 600 hFE — IC 240 VCE=2V fT — I E VCB=5V f=200MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 0.3 1 3 10 200 400 Ta=75˚C 25˚C –25˚C 160 300 120 200 80 100 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 2