2SD2359

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3 2 1 (Ta=25˚C) Ratings 20 20 5 1.2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter marking Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–62 Mini Power Type Package Marking symbol : 1O Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 14V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA IC = 500mA, IB = 10mA VCB = 6V, IE = –50mA, f = 200MHz VCB = 6V, IE = 0, f = 1MHz 20 20 5 200 0.11 100 23 800 0.2 V MHz pF min typ max 1 Unit µA V V V 2.5±0.1 +0.25 1 Transistor PC — Ta 1.4 2SD2359 IC — VCE 1.2 Ta=25˚C 1.0 1.0 25˚C Ta=75˚C 0.8 –25˚C 1.2 VCE=2V IC — VBE Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 0.8 3.5mA 3.0mA 0.8 0.6 2.5mA 2.0mA Collector current IC (A) IB=4.0mA 0.6 0.6 0.4 1.5mA 1.0mA 0.4 0.4 0.2 0.2 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 IC/IB=50 600 hFE — IC 240 VCE=2V fT — I E VCB=6V f=200MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 0.3 1 3 10 200 400 Ta=75˚C 300 25˚C –25˚C 160 Ta=75˚C 25˚C 120 200 80 100 40 0.1 0.3 1 3 10 0 0.01 0.03 0 0.1 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 60 Collector output capacitance Cob (pF) 50 IE=0 f=200MHz Ta=25˚C 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2