2SD2375

Power Transistors 2SD2375 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 6 3 1 25 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 0.55±0.15 1 2 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE fT * Conditions VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz min typ max 100 100 100 Unit µA µA µA V 60 500 1500 1 50 VCE(sat) V MHz *h FE Rank classification Q P Rank hFE 500 to 1000 800 to 1500 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 1 Power Transistors PC — Ta 40 1.0 (1) TC=Ta (2) Without heat sink (PC=2W) IB=1.0mA TC=25˚C 0.9mA 0.8 4 2SD2375 IC — VCE 5 VCE=5V TC=25˚C IC — VBE Collector power dissipation PC (W) 36 32 28 (1) 24 20 16 12 8 4 (2) 0 0 20 40 60 Collector current IC (A) 0.7mA 0.6 0.6mA 0.5mA 0.4 0.4mA 0.3mA 0.2 0.2mA 0.1mA 0 Collector current IC (A) 0.8mA 3 2 1 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 80 100 120 140 160 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 IC/IB=40 TC=25˚C 10000 hFE — IC 1000 VCE=4V TC=25˚C 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=12V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 80 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 (1) (2) 10 I CP t=1ms 3 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 10ms IC 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2