2SD2441

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm s Features q 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 0.5±0.08 1.5±0.1 0.4±0.04 (Ta=25˚C) Ratings 10 10 7 2 1.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 3.0±0.15 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC–62 Mini Power Type Package Marking symbol : 1V Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Forward voltage *1 Applicable (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob VF *1 Conditions VCB = 7V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 1V, IC = 400mA*2 IC = 1A, IB = 25mA*2 VCB = 60V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz IF = 500mA min typ max 1 10 10 7 200 0.17 190 50 1.3 *2 700 0.25 V MHz pF V to the built-in diode. Pulse measurement 2.5±0.1 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 +0.25 Unit µA V V V 1 Transistor PC — Ta 1.4 2SD2441 IC — VCE 1.2 Ta=25˚C 1.0 IB=3.0mA 2.5mA 0.8 2.0mA 0.6 1.5mA 2.0 2.4 VCE=1V IC — VBE Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (W) 1.0 Collector current IC (A) 1.6 Ta=75˚C 1.2 25˚C –25˚C 0.8 0.6 0.4 1.0mA 0.8 0.4 0.2 0.2 0.5mA 0.4 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 IC/IB=50 600 hFE — IC 600 VCE=1V fT — I E VCB=6V f=200MHz Ta=25˚C Forward current transfer ratio hFE 500 Ta=75˚C 400 25˚C 300 Transition frequency fT (MHz) 0.3 1 3 10 500 400 Ta=75˚C 25˚C –25˚C –25˚C 300 200 200 100 100 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=200MHz Ta=25˚C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 2