2SD2465

Power Transistors 2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2465 2SD2465A 2SD2465 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 40 50 20 40 5 8 4 25 2 150 –55 to +150 Unit V 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SD2465A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2465 2SD2465A 2SD2465 2SD2465A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 40 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) TC=25˚C 5 IB=60mA 50mA 40mA 30mA 3 20mA 2 10mA 1 5mA 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 2SD2465, 2SD2465A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 (2) (3) (4) (1) Collector current IC (A) 4 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 10000 IC/IB=10 hFE — IC 10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=5V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 1000 300 100 –25˚C 30 10 3 1 0.1 TC=100˚C 25˚C 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Transition frequency fT (MHz) 30 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf — IC 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=20V TC=25˚C tstg Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Switching time ton,tstg,tf (µs) 3 Collector current IC (A) 10 ICP IC 3 10ms 1 0.3 0.1 0.03 DC t=1ms 1 0.3 ton tf 0.1 0.03 0.01 0 1 2 3 4 5 6 7 8 0.01 1 3 10 30 2SD2465A 100 2SD2465 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SD2465, 2SD2465A Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3