2SD2549

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit: mm s Features q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 80 6 5 3 20 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 0.55±0.15 1 2 1:Gate 2:Drain 3:Source TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCE = 70V, VBE = 0 VCE = 70V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V min typ max 100 100 1 Unit µA µA mA V 80 70 10 1.8 0.7 30 0.5 4.5 0.5 250 V V MHz µs µs µs *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 30 8 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (1) TC=25˚C 7 7 2SD2549 IC — VCE 8 Ta=25˚C IC — VBE Collector power dissipation PC (W) 25 Collector current IC (A) 6 5 4 3 2 1 0 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA Collector current IC (A) 12 6 5 4 3 2 1 0 20 15 10 (2) 5 (3) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 Ta=25˚C 103 hFE — IC Ta=25˚C Area of safe operation (ASO) 30 Non repetitive pulse TC=25˚C 10 Forward current transfer ratio hFE Collector current IC (A) 1 ICP 3 IC 10ms 1s 0.3 102 t=1ms 10–1 1 10 10–2 0.1 1 10–2 10–3 10–2 10–1 1 10 10–1 1 10 1 3 10 30 100 300 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) Rth(t) — t 100 (1) Thermal resistance Rth(t) (˚C/W) (2) 10 1 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 0.8A (8W) and with a 100 × 100 × 2mm Al heat sink 0.1 1 10 100 1000 Time t (s) 2