2SD638

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150 Unit 0.55±0.1 0.45±0.05 1.25±0.05 V 3 2 1 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package 2.5 2.5 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2SB643 2SB644 2SB643 2SB644 (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 90 – 0.35 200 6 *2 min typ max –100 –1 4.1±0.2 s Absolute Maximum Ratings (Ta=25˚C) R 0. 4.5±0.1 7 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 Unit nA µA V V V 340 – 0.6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 800 –800 –700 2SB643, 2SB644 IC — VCE Ta=25˚C IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA –800 VCE=–10V Ta=25˚C –700 IC — I B Collector power dissipation PC (mW) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) –600 –500 –400 –300 –200 –100 0 0 –4 Collector current IC (mA) –600 –500 –400 –300 –200 –100 0 –8 –12 –16 –20 0 –2 –4 –6 –8 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –100 –30 –10 –3 25˚C –1 75˚C Ta=–25˚C IC/IB=10 600 hFE — IC VCE=–10V Forward current transfer ratio hFE 500 400 300 Ta=75˚C 200 25˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 100 –1 –3 –10 –1 –3 –10 0 – 0.01 – 0.03 –0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 240 24 Cob — VCB Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 104 ICEO — Ta VCE=–10V Transition frequency fT (MHz) 200 20 103 16 160 ICEO (Ta) ICEO (Ta=25˚C) –3 –10 –30 –100 120 12 102 80 8 10 4 40 0 1 3 10 30 100 0 –1 1 0 40 80 120 160 200 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (˚C) 2