2SD661

Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.9±0.1 0.4 q q q 2.4±0.2 2.0±0.2 3.5±0.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) 1.0 s 2.5±0.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.55±0.1 1.25±0.05 0.45±0.05 Ratings –35 –55 –35 –55 –5 –200 –50 400 150 –55 ~ +150 Unit V 3 2 1 emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB745 2SB745A 2SB745 2SB745A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –5V, IE = 2mA IC = –100mA, IB = –10mA VCE = –1V, IC = –100mA VCB = –5V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max –100 –1 4.1±0.2 4.5±0.1 7 Unit nA µA V –35 –55 –35 –55 –5 180 700 – 0.6 – 0.7 150 150 –1 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h VCE(sat) VBE fT NV V V MHz mV FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC — Ta 500 –160 –140 2SB745, 2SB745A IC — VCE Ta=25˚C –160 VCE=–5V Ta=25˚C –140 –300µA –250µA –200µA –150µA –100µA –50µA IC — I B Collector power dissipation PC (mW) 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –8 Collector current IC (mA) IB=–350µA –120 –100 –80 –60 –40 –20 0 –10 –12 0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) IB — VBE –800 VCE=–5V Ta=25˚C –700 –100 –120 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 VCE=–5V 25˚C Ta=75˚C –80 –25˚C VCE(sat) — IC IC/IB=10 Base current IB (µA) –600 –500 –400 –300 –200 –100 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Collector current IC (mA) –60 –40 – 0.3 25˚C – 0.1 Ta=75˚C –20 –25˚C – 0.03 – 0.01 – 0.1 – 0.3 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 –30 –100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 600 VCE=–5V 500 450 500 Ta=75˚C 400 25˚C fT — I E Collector output capacitance Cob (pF) VCB=–5V Ta=25˚C 20 18 16 14 12 10 8 6 4 2 0 – 0.1 – 0.3 Cob — VCB IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) 10 30 100 400 350 300 250 200 150 100 50 300 –25˚C 200 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NV — VCE 160 140 IC=–1mA GV=80dB Function=FLAT 300 IC=–1mA GV=80dB Function=RIAA 2SB745, 2SB745A NV — VCE 160 140 VCE=–10V GV=80dB Function=FLAT NV — IC Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=100kΩ 100 80 60 40 20 0 –1 22kΩ Noise voltage NV (mV) 240 Rg=100kΩ 180 120 100 80 60 22kΩ 40 4.7kΩ 20 0 – 0.01 Rg=100kΩ 120 22kΩ 60 4.7kΩ 0 –1 4.7kΩ –3 –10 –30 –100 –3 –10 –30 –100 – 0.03 – 0.1 – 0.3 –1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV — IC 300 VCE=–10V GV=80dB Function=RIAA 160 140 NV — Rg 300 VCE=–10V GV=80dB Function=FLAT NV — Rg VCE=–10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=–1mA 40 – 0.5mA 20 0 – 0.1mA 180 Noise voltage NV (mV) 240 240 180 120 Rg=100kΩ 22kΩ 4.7kΩ 120 60 60 – 0.5mA 0 IC=–2mA – 0.1mA 10 30 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 1 3 10 30 100 1 3 Collector current IC (mA) Signal source resistance Rg (kΩ) Signal source resistance Rg (kΩ) 3