2SD661A

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 7 200 100 400 150 –55 ~ +150 Unit 3 2 1 V 2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD661 2SD661A 2SD661 2SD661A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 200 150 35 55 35 55 7 210 650 1 V MHz mV min typ max 0.1 1 Unit µA µA V 1.25±0.05 s Absolute Maximum Ratings (Ta=25˚C) 0.55±0.1 0.45±0.05 4.1±0.2 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.0±0.1 R 0. 4.5±0.1 7 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage *h FE Rank classification R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 hFE Rank 1 Transistor PC — Ta 500 160 140 2SD661, 2SD661A IC — VCE Ta=25˚C 160 VCE=5V Ta=25˚C 140 IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 Collector current IC (mA) 400 IB=350µA 300µA 250µA 200µA 150µA 100µA 50µA 120 100 80 60 40 20 0 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) IB — VBE 800 VCE=5V Ta=25˚C 700 100 120 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25˚C VCE=5V VCE(sat) — IC IC/IB=10 Base current IB (µA) 600 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1.0 Collector current IC (mA) Ta=75˚C 80 –25˚C 60 40 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C –25˚C 20 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 720 VCE=5V 500 fT — I E Collector output capacitance Cob (pF) VCB=5V Ta=25˚C 20 Cob — VCB IE=0 f=1MHz Ta=25˚C 16 Forward current transfer ratio hFE 600 Ta=75˚C 480 Transition frequency fT (MHz) 400 25˚C 300 12 360 –25˚C 200 8 240 120 100 4 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NV — VCE 160 140 IC=1mA GV=80dB Function=FLAT 300 Rg=100kΩ 2SD661, 2SD661A NV — VCE 160 140 VCE=10V GV=80dB Function=FLAT NV — IC Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 40 20 0 1 Noise voltage NV (mV) 240 IC=1mA GV=80dB Function=RIAA 180 Rg=100kΩ 120 100 80 60 40 4.7kΩ 20 0 0.01 Rg=100kΩ 22kΩ 4.7kΩ 120 22kΩ 60 4.7kΩ 22kΩ 0 3 10 30 100 1 3 10 30 100 0.03 0.1 0.3 1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV — IC 300 VCE=10V GV=80dB Function=RIAA 160 140 NV — Rg 300 VCE=10V GV=80dB Function=FLAT NV — Rg VCE=10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=1mA 40 0.5mA 20 0 0.1mA Noise voltage NV (mV) 240 240 IC=1mA 180 180 Rg=100kΩ 120 22kΩ 60 4.7kΩ 120 0.5mA 60 0.1mA 0 0.01 0 1 3 10 30 100 1 3 10 30 100 0.03 0.1 0.3 1 Collector current IC (mA) Signal source resistance Rg (kΩ) Signal source resistance Rg (kΩ) 3