2SD958

Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB788 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 120 120 7 50 20 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 3 2 1 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 2mA IC = 20mA, IB = 2mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 40V, IC = 2mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ 1.25±0.05 s Absolute Maximum Ratings (Ta=25˚C) 0.55±0.1 0.45±0.05 max 100 1 4.1±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 4.5±0.1 7 Unit nA µA V V V 120 120 7 180 700 0.6 200 150 VCE(sat) V MHz mV *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC — Ta 500 24 IB=50µA Ta=25˚C 45µA 40µA 16 35µA 30µA 12 25µA 20µA 15µA 4 10µA 5µA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 2SD958 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 Ta=75˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) 300 200 Collector current IC (mA) 400 20 8 100 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE — IC 600 VCE=5V 800 fT — I E 8 Cob — VCB Collector output capacitance Cob (pF) VCB=5V Ta=25˚C IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 700 600 500 400 300 200 100 7 6 5 4 3 2 1 0 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) NV — IC 160 140 VCE=10V GV=80dB Function=FLAT Ta=25˚C Noise voltage NV (mV) 120 100 80 60 22kΩ 40 20 0 0.01 4.7kΩ Rg=100kΩ 0.03 0.1 0.3 1 Collector current IC (mA) 2