2SD968

Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 100 120 100 120 5 1 0.5 * 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD968 2SD968A 2SD968 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol Unit V 3 2 1 marking emitter voltage 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package 1 150 –55 ~ +150 Marking symbol : W(2SD968) V(2SD968A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SD968 2SD968A (Ta=25˚C) Symbol VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 100 120 5 90 50 100 0.2 0.85 120 11 *2 typ max Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 220 0.6 1.2 20 Rank classification Rank hFE1 Q 90 ~ 155 2SD968 2SD968A WQ VQ R 130 ~ 220 WR VR Pulse measurement Marking Symbol 2.5±0.1 +0.25 Unit V V V V MHz pF 1 Transistor PC — Ta 1.4 2SD968, 2SD968A IC — VCE IB=20mA 1.2 1.2 IC — I B Ta=25˚C 12mA 10mA 8mA 6mA 1.0 VCE=10V Ta=25˚C Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 Collector current IC (A) 18mA 16mA 14mA 1.0 0.8 Collector current IC (A) 0.8 0.8 0.6 4mA 0.6 0.6 0.4 2mA 0.2 0.4 0.4 0.2 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 3 6 9 12 15 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=–25˚C 75˚C IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C –25˚C Ta=75˚C 150 100 50 0 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT — IE 200 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 50 IE=0 f=1MHz Ta=25˚C 40 Transition frequency fT (MHz) 160 120 30 80 20 40 10 0 –1 0 –3 –10 –30 –100 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) 2