Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD969
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
2.5
2.5
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –25V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IC = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 150 15
*2
min
typ
max –100 –1
–25 –20 –7 90 25 – 0.4 –1.2 220
4.1±0.2
4.5±0.1
7
Unit nA µA V V V
V V MHz
VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
25
pF
Pulse measurement
*1h
FE1
Rank classification
Q 90 ~ 155 R 130 ~ 220
Rank hFE1
1
Transistor
PC — Ta
800 –1.2 Ta=25˚C 700 –1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 –1 –2 –3 –4 –5 –6 IB=–10mA
2SB790
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
–100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C
VCE(sat) — IC
IC/IB=10
Collector power dissipation PC (mW)
Collector current IC (mA)
– 0.8
–9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA
– 0.6
– 0.4
– 0.3 – 0.1 – 0.03
– 0.2
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) — IC
–100
hFE — IC
IC/IB=10 600 VCE=–2V 320
fT — I E
VCB=–10V Ta=25˚C
Base to emitter saturation voltage VBE(sat) (V)
500
Transition frequency fT (MHz)
–1 –3 –10
–30 –10 –3 25˚C –1 75˚C Ta=–25˚C
Forward current transfer ratio hFE
280 240 200 160 120 80 40
400
300 Ta=75˚C 25˚C 200 –25˚C 100
– 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0 – 0.01 – 0.03 – 0.1 – 0.3
0 0.1
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob — VCB
80
Collector output capacitance Cob (pF)
70 60 50 40 30 20 10 0 –1
IE=0 f=1MHz Ta=25˚C
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
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