2SD973

Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 1.0±0.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V 1.5 R0.9 R0.9 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol 0.85 0.55±0.1 1.25±0.05 0.45±0.05 3 2 1 emitter voltage 2SD973A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V 2.5 2.5 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD973 2SD973A 2SD973 2SD973A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0. f = 1MHz min typ max 0.1 30 60 25 50 5 85 50 160 100 0.2 0.85 200 11 *2 4.1±0.2 4.5±0.1 7 Unit µA V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 0.4 1.2 V V MHz 20 pF Pulse measurement Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.4 2SD973, 2SD973A IC — VCE 1.50 Ta=25˚C 1.25 1.0 1.2 VCE=10V Ta=25˚C IC — I B Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 1.00 8mA 7mA 6mA 5mA 4mA Collector current IC (A) IB=10mA 9mA 0.8 0.8 0.75 0.6 0.6 0.50 3mA 2mA 0.4 0.4 0.2 0.25 1mA 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C IC/IB=10 600 hFE — IC VCE=10 Forward current transfer ratio hFE 500 400 300 Ta=75˚C 200 25˚C 100 –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 200 Cob — VCB 50 120 VCER — RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25˚C IC=10mA Ta=25˚C 100 160 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C Transition frequency fT (MHz) 40 80 120 30 60 2SD973A 40 2SD973 20 80 20 40 10 0 –1 0 –3 –10 –30 –100 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 Transistor ICEO — Ta 104 VCE=10V 10 3 ICP 103 2SD973, 2SD973A Area of safe operation (ASO) Single pulse Ta=25˚C Collector current IC (A) 1 0.3 0.1 0.03 IC t=1s t=10ms ICEO (Ta) ICEO (Ta=25˚C) 102 0.003 1 0 20 40 60 80 100 120 140 160 0.001 0.1 0.3 1 3 10 2SD973 10 0.01 30 2SD973A 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3