2SJ163

Silicon Junction FETs (Small Signal) 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features 2.9 –0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 −20 −10 150 150 −55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1 –0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 4M s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = −10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10µA, VDS = 0 VDS = −10V, ID = −10µA VDS = −10V, ID = −1mA, f = 1kHz VDS = −10mV, VGS = 0 VDS = −10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 12 4 3.5 min − 0.2 typ max −6 10 Unit mA nA V V mS Ω pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O − 0.2 to −1 4MO P − 0.6 to −1.5 4MP Q −1 to −3 4MQ R −2.5 to −6 4MR Marking Symbol 0 to 0.1 0.1 to 0.3 0.4±0.2 0.16 –0.06 +0.1 1 Silicon Junction FETs (Small Signal) PD  Ta 200 –4.0 Ta=25˚C 175 –3.5 –2.5 2SJ163 ID  VDS –3.0 VDS=–10V ID  VGS Allowable power dissipation PD (mW) Drain current ID (mA) Drain current ID (mA) 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 –3.0 –2.5 –2.0 –1.5 –1.0 VGS=0V –2.0 –1.5 0.2V 0.4V 0.6V –1.0 – 0.5 – 0.5 0 0 –2 –4 –6 –8 0.8V 0 –10 –12 0 1 2 3 4 5 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs |  VGS 4.0 16 VDS=–10V f=1kHz Ta=25˚C | Yfs |  ID Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 24 Ciss, Coss, Crss  VDS VDS=–10V f=1kHz Ta=25˚C f=1MHz VGS=0 Ta=25˚C Forward transfer admittance |Yfs| (mS) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 Forward transfer admittance |Yfs| (mS) 14 12 10 8 6 4 2 0 20 16 Ciss 12 8 4 Coss Crss 0 –1 –3 –10 –30 –100 1.5 1.0 0.5 0 0 –2 –4 –6 –8 –10 –12 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) 2