2SK1228

Silicon MOS FETs (Small Signal) 2SK1228 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 s Absolute Maximum Ratings (Ta = 25°C) +0.2 1.1 –0.1 1.45 Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 10 50 100 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: 4V s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff *2 *1 Conditions VDS = 20V, VGS = 0 VGS = 10V, VDS = 0 ID = 10µA, VGS = 0 ID = 100µA, VDS = 5V ID = 10mA, VGS = 2.5V ID = 10mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 2.5V, RL = 470Ω VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 max 1 1 50 0.5 100 0.8 27 1.1 50 0.16 –0.06 +0.1 Unit µA µA V V Ω mS pF pF pF µs µs 20 39 4.5 4.1 1.2 0.2 0.2 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 Pulse measurement ton, toff measurement circuit Vout 470Ω Vin VDD = 5V Vout 10% 10% 90% ton toff 90% 50Ω 100µF VGS = 2.5V 1 Silicon MOS FETs (Small Signal) PD  Ta 240 48 2SK1228 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V f=1kHz Ta=25˚C Allowable power dissipation PD (mW) 200 40 50 160 Drain current ID (mA) 32 VGS=1.8V 40 120 24 1.6V 16 30 80 1.4V 1.2V 1.0V 20 40 8 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 1 2 3 4 5 6 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 12 120 ID  VGS VDS=5V RDS(on)  VGS Drain to source ON-resistance RDS(on) (Ω) 120 ID=10mA 100 10 100 8 Drain current ID (mA) Ta=–25˚C 80 25˚C 75˚C 60 80 6 Coss 4 Ciss 2 Crss 0 1 3 10 30 100 300 1000 60 Ta=75˚C 40 25˚C –25˚C 20 40 20 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) VIN  IO 100 30 VO=5V Ta=25˚C Input voltage VIN (V) 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2